InP based Laser diodes are being developed for a variety of applications in the area of optical tele- and data communications, and sensors. This development work mainly aims at improving laser performance as well as reducing costs related to processing, testing, and eventually packaging. Depending on the specific device the wavelength range between about 1200 nm and 1900 nm is covered. Bulk-InGaAsP-, QW-InGaAsP-, QW-InGaAlAs-, combinations thereof, and most recently also quantum dot (QD) structures are used as active layer.
Products
- Flyer: Directly Modulated Laser for Uncooled 28 GBPS and Cooled 56 GBPS (pdf)
- Flyer: InP Gain Chips (RSOA) for Hybrid Integration (pdf)
- Flyer: QD and QW mode-locked Lasers as Comb and Pulse Sources (pdf)
- Flyer: Electroabsorbtion-Modulated Lasers (EML) for 100 G / 400 G (pdf)
- Flyer: InP-Chips for Hybrid Integration (pdf)
- Flyer: Surface Emitting DFB-Laser (pdf)
- Flyer: Laser Technology (pdf)
- Flyer: Eye Safe High Power Broad Area Laser (pdf)
- Flyer: InP-Semiconductor Optical Amplifiers (pdf)
Research Topics
Our current research, development, design and fabrication activities cover the following topics:
- Fabry-Perot and DFB laser diodes with tapered output for high coupling efficiency
- DFB lasers for 28…70Gb/s direct modulation
- EMLs for 28…200Gb/s direct modulation
- surface emitting DFB lasers (HCSEL, horizontal cavity design)
- DFB lasers for sensing applications and other industrial applications
- medium power DFB lasers up to 200mW
- high power broad area FP lasers with >4 W CW and >16 W pulse optical power (300ns pulses)
- gain chips for external cavity lasers;
- DFB lasers, SOAs, and RSOAs for flip chip hybrid integration with Si-, SiN and Polymer PICs
- Mode locked lasers as wavelength comb sources
Projects
Explore the current and finished projects of the LAS Group. Realized for public and industrial clients.
