Custom InP-Based Semiconductor Saturable Absorber Mirrors (SESAMs) For 1.56 μm

At a Glance

Highly customizable, strain-free Semiconductor Saturable Absorber Mirrors (SESAMs) based on InP-based technology

Technical Background

Robust, high-quality semiconductor saturable absorber mirrors (SESAMs) are a prerequisite for implementing mode-locked pulsed laser systems with high performance and long-term stability. The InP-based SESAM platform at Fraunhofer HHI combines highly customizable device performance, long lifetime and excellent wafer-to-wafer reproducibility for volume production. Our SESAM designs are based on monolithic, strain-free semiconductor structures supplemented with application-specific dielectric coatings. This enables the adaption of our SESAMs to your specific laser design. 

Features 

  • Realization of custom designs
  • Robust, strain-free semiconductor stack
  • Application-specific dielectric coatings
  • Highly customizable performance
  • Wafer-scale production

Applications

  • Solid-state lasers
  • Fiber lasers
  • Semiconductor lasers

Specifications

  • Operation wavelength: 1500 to 1600 nm
  • Relaxation time TA: 200 fs to 100 ps
  • Modulation depth ΔR: typ. 1 to 20% 
  • Non-saturable losses ΔRns: down to <1 % 
  • Saturation fluence Fsat: typ. 10 to 100 μJ/cm²
  • Roll-over fluence F2: typ. 10 to 1000 μJ/cm²
  • Stopband FWHM: typ. 100 nm

 

Model function for the non-linear, fluence dependent SESAM reflectivity R(F)
Absorber relaxation time as a function of doping concentration for calibration samples and SESAMs