At a Glance
high-speed surface illuminated InGaAs photodiodes for datacom, telecom and sensing applications
Technical Background
High-speed surface-illuminated photodiodes are key components for hybrid-integrated photodetectors in datacom and telecom transceivers. The photodiodes operate at a wavelength
of 1310 nm for intra-datacenter links or 1550 nm for inter-datacenter and long-haul optical communication links.
The photodiode chips are based on mature InP technology and are fabricated at the wafer process line of HHI, offering-Telcordia and space-qualified processes. Due to the ability of customising the photodiode chips, costumers get the optimal performance for their application.
Features
- up to 60 GHz 3 dB-bandwidth
- back side or top side illumination
- single diode or array configuration
- lens integration for back side illuminated photodiode (optional)
- integrated bias-T (optional)
- flip chip or wire bonding
- IEEE P802.3 bs compliant
Applications
- datacommunication
- telecommunication
- sensing
Technical Specifications
- wavelength: 1060 nm - 1700 nm
- responsivity:
28 GBaud: 0.95 A/W @ 1310 nm
32 GBaud: 0.75 A/W @ 1550 nm
56 GBaud: 0.7 A/W @ 1310 nm
56 GBaud: 0.55 A/W @ 1550 nm - low dark current: < 10 nA @ 5 V
- IEEE P802.3 bs compliant
Customization
- 3 dB-bandwidth up to 60 GHz
- customised responsivity-bandwidth trade-off
- back side or top side illumination
- single diode or array configuration
- integrated bias-T
- lens integration for back side illuminated photodiode
- flip chip or wire bonding
- customised pitches and pad configurations
