Directly modulated Laser (DML) for uncooled 40Gb/s and cooled 106 Gb/s array
Compact and energy-efficient DML for high-speed communication and sensing
The uncooled directly modulated laser provides a compact solution for optical communication systems. In a dual DFB configuration with cooling, higher modulation bandwidths and date rates up to 106 Gbit/s are possible. Customized designs are available upon request.
Gain Chips (RSOA) for External Cavity Laser
High-performance InP gain chips for hybrid integration in communication and sensing applications
The InP gain chips (RSOA, Reflective Semiconductor Optical Amplifier) offer a flexible solution for applications with photonic multi-chip approaches. They are offered in p-side or flip chip configuration with integrated taper for low loss coupling. Adaptations based on customer requirements regarding emission wavelength and facet coatings are possible.
Mode-Locked Lasers (MLL)
Comb and pulse sources for multiwavelength modulators and phase controlled OFDM channels
Fraunhofer HHI’s MLL can operate in a broad wavelength range in O-, C-, and L-band. The buried heterostructure InAs/InP QD and InGaAsP/InP QW offer low power consumption, high stability and performance for applications in optical communication and quantum technology.
Electro-Absorption-Modulated Lasers (EML)
High speed EML for direct detection schemes in tele- and datacom
The EMLs combine a laser and an electro-absorption modulator. The high modulation bandwidth > 50 GHz enables operation up to 100 Gbit/s NRZ and 200 Gbit/s PAM4 at wavelengths in O-, C-, and L-band. Device variants are available, e.g., with semiconductor optical amplifier or in array configuration.
InP-Emitters for Hybrid Integration
Compact laser solutions for integration into optical systems in telecom or datacom
The InP emitters for horizontal and vertical integration offer high performance with integrated taper for low optical coupling losses. They are compatible with various photonic platforms like SOI, SiN, LNOI, glass and polymer. Etched facets and adaptations are available upon request.
High Power Broad Area (BA) Lasers
Eye safe high power laser diodes for medical applications, range finding and sensing
The high-power broadband lasers offer a high optical output power of up to 4.9 W at a typical wavelength of 1550 nm. The InP-based structures can be customized regarding laser geometry, emission wavelength and optional wavelength stabilization.
Semiconductor Optical Amplifiers (SOA)
High performance InP SOAs for telecom, datacom and sensing
Fraunhofer HHI’s buried-heterostructure SOA can be operated in the O- and C-band. They are available in p-side, flip-chip, single chip or array configuration with possible customization like center wavelength, polarization sensitivity or facet coatings.
High Power Single Mode Lasers
InP DFB lasers in the O-band for communication and sensing applications
The high-power single-mode lasers offer high output power and excellent beam quality, with high side mode suppression, low relative intensity noise and low optical linewidth. The lasers incorporate a DFB and a SOA to enable wavelength stability and high optical output power for long-range transmissions. Customization regarding the center wavelength or facet coatings are possible.
High-Speed Differential EMLs
Compact optical transmitters enabling ultra-fast data transmission for telecom and datacom networks
Fraunhofer HHI develops high-speed electro-absorption modulated lasers (EMLs) for next-generation telecom and datacom systems. By combining a laser and an electro-absorption modulator suitable for differential drive in a single device, the transmitters achieve modulation bandwidths beyond 50 GHz and support data rates up to 100 Gb/s NRZ and 200 Gb/s PAM4 across O-, C-, and L-band wavelengths. Compact chip designs and array configurations enable scalable, high-performance optical transmitter solutions.