The InP and RF department develops high-performance optoelectronic devices and integrated circuits based on indium phosphide (InP) for high-frequency and high-speed applications. It combines material technology, device development, and circuit design into a comprehensive platform for photonic and electronic integration, being selectively extended by thin-film lithium niobate (TFLN) technologies.
The core focus lies on InP-based lasers, modulators, and detectors, as well as their integration into photonic integrated circuits (PICs). In addition, the department develops TFLN-based modulators and PIC concepts enabling very high bandwidths and efficient electro-optic functionalities. The portfolio is complemented by RF design and IC development for demanding transmission and reception systems.
The in-house photonic InP foundry enables the realization of customer-specific designs, ranging from system concepts and chip design to prototyping and small-volume production.
By closely linking device physics, RF circuit design, and integrated photonics based on InP and TFLN, the department delivers high-performance solutions for high-speed data transmission, coherent communication systems, optical signal processing, and high sensitivity SWIR detection applications.
Research Groups
The research groups focus on InP lasers, InP modulators, InP detectors and IC Design.
Publications
Journal papers, conference proceedings, talks and tutorials, standardization contributions and books. Find out about the publications of our scientists.
People and Contact
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