56 GBd DFB + InP Mach-Zehnder-Modulator Module for O-Band
High-precision modulation for optical communication systems in the O-band
The Mach-Zehnder modulator features an integrated DFB laser, enabling precise amplitude and phase modulation of optical signals in the 1280 nm – 1340 nm wavelength range. They offer high efficiency and excellent linearity, making it ideal for optical transport applications.
56 GBd InP Mach-Zehnder-Modulator Module with TEC for O- Band
High-performance modulator for ultra-high data rates in the O-band
The O-Band InP Mach-Zehnder Modulator enables optical transport applications at speeds of up to 56 GBd. It delivers high bandwidth and zero chirp, in combination with an integrated TEC, making it ideal for use in optical high-speed communication systems.
56 GBd InP Mach-Zehnder-Modulator Module with TEC for C-Band
High-speed modulator for C-band communication systems
The C-Band InP Mach-Zehnder Modulator provides a powerful solution for modulating optical signals up to 56 Gbaud in the C-band. The integrated TEC allows a stable operation and performance. It combines high efficiency and excellent signal quality for communication applications in optical networks and high-speed transmission systems.
100 GBd InP Mach-Zehnder-Modulator Chip
Ultra-high-speed modulator chip for integration in communication applications
The O-Band InP Mach-Zehnder Modulator enables optical signal modulation at speeds of up to 100 GBd. It features a unique travelingwave-electrode design, resulting in high bandwidth and zero chirp.
Thin Film Lithium Niobate
Photonic components in TFLN for sensing applications from 450-4500 nm
The photonic integrated thin-film lithium niobate circuits can be used in future tele- and datacom links and quantum applications. The unique design of the phase shifters enables a high RF bandwidth and low Vπ. The PICs are fabricated at the in-house ISO 9001 certified wafer process line of Fraunhofer HHI.