At a Glance
- High performance buried heterostructure InAs/InP QD and InGaAsP/InP QW mode-locked lasers as comb and pulse sources
Features
- Wavelengths in O-, C-, L-Band
- > 33 channels > -3 dBm in the DWDM 50 GHz grid
- Combined laser modes RIN values of < -145 dB/Hz
- Individual mode RIN values of ≈ -130 dB/Hz
- < 500 fs pulses by using a simple SMF
- fully customizable
Applications
- Multiwavelength modulators in short reach transmission
- Phase controlled OFDM channels in long reach
- Pulse source with < 500 fs pulses
Device Variants
- Standard chip size 425 μm x 840 μm (for 50 GHz mode spacing)
- InAs/InP QDs or InGaAsP/InP QWs as active layers
- Optional:
- Etched facets
- Integrated heater stripe parallel for wavelength fine tuning of comb modes
Typical Performance
- Comb spectra with > 33 lines > -3 dBm
- Slope efficiency of ≈ 0.33 W/A
- Repetition frequency - 3 dB linewidths down to 60 and 140 kHz for QW and QD devices, respectively
- Individual mode optical linewidth of ≈ 0.6 and 14 MHz for QW and QD devices, respectively
