The lasers group is focused on advancing short wave infrared (SWIR) InP-based edge-emitting laser diodes within traditional optical communication bands like the O-Band (1310 nm) and C-Band (1550 nm), as well as alternative ranges such as the S-Band and L-Band. The main areas of focus include optical telecommunications, data communications, and sensor technology. This research aims to innovate new device structures, enhance device performance, and minimize costs associated with processing, testing, and eventual packaging. Active layers include Bulk-InGaAsP, QW-InGaAsP, QW-InGaAlAs combinations, and more recently, quantum dot (QD) structures.
Products
- High-Speed Differential EMLs
- Electro-Absorption-Modulated Lasers (EML)
- High Power Broad Area (BA) Lasers
- High Power Single Mode Lasers
- Mode-Locked Lasers (MLL)
- Gain Chips (RSOA) for External Cavity Laser
- Semiconductor Optical Amplifiers (SOA)
- Emitters for Hybrid Integration
- Directly modulated Laser (DML) for uncooled 40Gb/s and cooled 106 Gb/s array
Research Topics
Our ongoing research, development, design, and fabrication efforts include the following areas.
Projects
Explore the current and finished projects of the LAS Group. Realized for public and industrial clients.
