Lasers

The lasers group is focused on advancing short wave infrared (SWIR) InP-based edge-emitting laser diodes within traditional optical communication bands like the O-Band (1310 nm) and C-Band (1550 nm), as well as alternative ranges such as the S-Band and L-Band. The main areas of focus include optical telecommunications, data communications, and sensor technology. This research aims to innovate new device structures, enhance device performance, and minimize costs associated with processing, testing, and eventual packaging. Active layers include Bulk-InGaAsP, QW-InGaAsP, QW-InGaAlAs combinations, and more recently, quantum dot (QD) structures.

• Uncooled Directly Modulated Laser (DML)
• Gain Chips (RSOA) for External Cavity Lasers
• Mode-Locked Lasers (MLL)
• Electro-Absorption-Modulated Lasers (EML)
• Emitters for Hybrid Integration
• High Power Broad Area (BA) Lasers
• Semiconductor Optical Amplifiers (SOA)
• High Power Single Mode Lasers