The main focus of the Lasers Group (LAS) is the research and the development of Laser diodes for a variety of applications in the area of optical tele- and data communications, and sensors. The development work is mainly focused on high end laser performance and customer specified device versions. As active layer InGaAsP- and InGaAlAs-MQW structures are used, covering the wavelength range between about 1200nm and 1900nm. All devices are completely fabricated at HHI using our InP processing line. Characterisation and chip selection is carried out using an automatic bar measurement system. Mounted devices can be fully characterised with respect to all relevant laser parameters such as e.g. output power, optical far-field, modal gain, relative intensity noise (RIN), frequency response and large signal modulation.

Research Topics

Our current research, development, design and fabrication activities cover the following topics:

  • Fabry-Perot and DFB laser diodes with tapered output for high coupling efficiency
  • lasers for 28 Gb/s direct modulation
  • EMLs for 10…70 Gb/s direct modulation
  • tapered curved stripe design DFB lasers (CSDFB) with better single mode yield and less influence of external reflections
  • surface emitting DFB lasers (HCSEL, horizontal cavity design)
  • DFB lasers for sensing applications and other industrial applications
  • medium power DFB lasers up to 150 mW (cw)
  • high power FP laser diodes up to 700 mW (cw)
  • SOAs, RSOAs and gain elements for external cavity lasers
  • 1450-1550 nm high power broad area lasers with 18W pulsed- and 4W CW-output power


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Explore the current and finished projects of the LAS Group. Realized for public and industrial clients.

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