The main focus of the Lasers Group (LAS) is the research and the development of Laser diodes for a variety of applications in the area of optical tele- and data communications, and sensors. The development work is mainly focused on high end laser performance and customer specified device versions. As active layer InGaAsP- and InGaAlAs-MQW structures are used, covering the wavelength range between about 1200nm and 1900nm. All devices are completely fabricated at HHI using our InP processing line. Characterisation and chip selection is carried out using an automatic bar measurement system. Mounted devices can be fully characterised with respect to all relevant laser parameters such as e.g. output power, optical far-field, modal gain, relative intensity noise (RIN), frequency response and large signal modulation.